Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si
Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence of silicide-induced microstructural defects which are like...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/95651 http://hdl.handle.net/10220/8338 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Erbium silicide Schottky diodes formed on Si(001)
substrate using rapid thermal annealing method show degraded
Schottky-barrier height ϕ_Beff and ideality factor due to the
presence of silicide-induced microstructural defects which are
likely sources of trap states. A method to improve the ϕ_Beff and
of the diodes utilizing in situ Ar plasma cleaning to induce a light
amorphization of the Si(001) substrate is proposed. Even though the diodes formed in this way are less textured and have a poorer
interface, they are free of silicide-induced microstructural defects, leading to an overall improvement in current transport and conduction properties which can be modeled using inhomogenous
Schottky contact model. |
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