Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si

Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si

Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence of silicide-induced microstructural defects which are like...

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書目詳細資料
Main Authors:	Tang, L. J., Tan, Eu Jin, Pey, Kin Leong, Chi, Dong Zhi, Lee, Pooi See
其他作者:	School of Materials Science & Engineering
格式:	Article
語言:	English
出版:	2012
主題:	DRNTU::Engineering::Materials
在線閱讀:	https://hdl.handle.net/10356/95651 http://hdl.handle.net/10220/8338
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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