Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si
Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence of silicide-induced microstructural defects which are like...
Saved in:
Main Authors: | Tang, L. J., Tan, Eu Jin, Pey, Kin Leong, Chi, Dong Zhi, Lee, Pooi See |
---|---|
Other Authors: | School of Materials Science & Engineering |
Format: | Article |
Language: | English |
Published: |
2012
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/95651 http://hdl.handle.net/10220/8338 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel
by: Cui, Guangda, et al.
Published: (2012) -
Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors
by: Tan, Eu Jin, et al.
Published: (2013) -
Erbium silicidation on SiGe for advanced MOS application
by: Yiew, Daphne Q. F., et al.
Published: (2013) -
Pyramidal structural defects in erbium silicide thin films
by: Srolovitz, David J., et al.
Published: (2012) -
First-principles simulations of Si vacancy diffusion in erbium silicide
by: Peng, G.W., et al.
Published: (2014)