Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal

Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal

10.1063/1.3645018

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Bibliographic Details
Main Authors: Koh, S.-M., Wang, X., Thanigaivelan, T., Henry, T., Erokhin, Y., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82999
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82999

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