Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si

Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si

Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence of silicide-induced microstructural defects which are like...

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Bibliographic Details
Main Authors: Tang, L. J., Tan, Eu Jin, Pey, Kin Leong, Chi, Dong Zhi, Lee, Pooi See
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/95651
http://hdl.handle.net/10220/8338
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/95651
http://hdl.handle.net/10220/8338

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