Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement
Self-assembled monolayer (SAM) of alkane-thiol is formed on copper (Cu) thin layer coated on silicon (Si) wafer with the aim to protect the surface against excessive oxidation during storage in the room ambient. After 3 days of storage, the temporary SAM layer is desorbed with in situ anneal in iner...
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sg-ntu-dr.10356-960422020-03-07T12:47:12Z Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement Ang, X. F. Wei, J. Leong, K. C. Tan, Chuan Seng Lim, Dau Fatt A*STAR SIMTech DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Self-assembled monolayer (SAM) of alkane-thiol is formed on copper (Cu) thin layer coated on silicon (Si) wafer with the aim to protect the surface against excessive oxidation during storage in the room ambient. After 3 days of storage, the temporary SAM layer is desorbed with in situ anneal in inert ambient to uncover the clean Cu surface. A pair of wafers is bonded at 250 °C. Clear evidences of in-plane and out-of-plane Cu grain growth are observed resulting in a wiggling bonding interface. This gives rise to enhancement in shear strength in the bonded Cusingle bondCu layer. 2013-07-11T08:48:29Z 2019-12-06T19:24:49Z 2013-07-11T08:48:29Z 2019-12-06T19:24:49Z 2011 2011 Journal Article https://hdl.handle.net/10356/96042 http://hdl.handle.net/10220/11241 10.1016/j.microrel.2011.04.003 en Microelectronics reliability © 2011 Elsevier Ltd. |
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DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Ang, X. F. Wei, J. Leong, K. C. Tan, Chuan Seng Lim, Dau Fatt Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement |
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Self-assembled monolayer (SAM) of alkane-thiol is formed on copper (Cu) thin layer coated on silicon (Si) wafer with the aim to protect the surface against excessive oxidation during storage in the room ambient. After 3 days of storage, the temporary SAM layer is desorbed with in situ anneal in inert ambient to uncover the clean Cu surface. A pair of wafers is bonded at 250 °C. Clear evidences of in-plane and out-of-plane Cu grain growth are observed resulting in a wiggling bonding interface. This gives rise to enhancement in shear strength in the bonded Cusingle bondCu layer. |
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A*STAR SIMTech |
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A*STAR SIMTech Ang, X. F. Wei, J. Leong, K. C. Tan, Chuan Seng Lim, Dau Fatt |
format |
Article |
author |
Ang, X. F. Wei, J. Leong, K. C. Tan, Chuan Seng Lim, Dau Fatt |
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Ang, X. F. |
title |
Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement |
title_short |
Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement |
title_full |
Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement |
title_fullStr |
Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement |
title_full_unstemmed |
Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement |
title_sort |
low temperature cu-cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement |
publishDate |
2013 |
url |
https://hdl.handle.net/10356/96042 http://hdl.handle.net/10220/11241 |
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1681049957891571712 |