MOSFET drain current noise modeling with effective gate overdrive and junction noise

MOSFET drain current noise modeling with effective gate overdrive and junction noise

In this letter, a drain current noise model that includes the channel thermal noise and the shot noise generated at the source-bulk junction and the drain-bulk junction is presented. A unified analytical expression is derived to ensure excellent continuity with smooth transition of drain current noi...

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Bibliographic Details
Main Authors: Chan, L. H. K., Yeo, Kiat Seng, Chew, Kok Wai Johnny, Ong, Shih Ni, Loo, Xi Sung, Boon, Chirn Chye, Do, Manh Anh
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/96067
http://hdl.handle.net/10220/11347
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Institution: Nanyang Technological University
Language: English
Description
Summary:In this letter, a drain current noise model that includes the channel thermal noise and the shot noise generated at the source-bulk junction and the drain-bulk junction is presented. A unified analytical expression is derived to ensure excellent continuity with smooth transition of drain current noise from weak- to strong-inversion regimes, including the moderate-inversion region. Excellent agreement between simulated and extracted noise data has shown that the proposed model is accurate over different dimensions and operating conditions.

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