MOSFET drain current noise modeling with effective gate overdrive and junction noise

• Main Authors: Chan, L. H. K., Yeo, Kiat Seng, Chew, Kok Wai Johnny, Ong, Shih Ni, Loo, Xi Sung, Boon, Chirn Chye, Do, Manh Anh
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/96067; http://hdl.handle.net/10220/11347
• Institution: Nanyang Technological University

In this letter, a drain current noise model that includes the channel thermal noise and the shot noise generated at the source-bulk junction and the drain-bulk junction is presented. A unified analytical expression is derived to ensure excellent continuity with smooth transition of drain current noise from weak- to strong-inversion regimes, including the moderate-inversion region. Excellent agreement between simulated and extracted noise data has shown that the proposed model is accurate over different dimensions and operating conditions.