Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrate

• المؤلفون الرئيسيون: Dolmanan, S. B., Teo, S. L., Arulkumaran, Subramaniam, Lin, Vivian Kaixin, Ng, Geok Ing, Vicknesh, Sahmuganathan, Tan, Joyce Pei Ying, Kumar, M. Krishna, Tripathy, Sudhiranjan
• مؤلفون آخرون: Annual Device Research Conference (70th : 2012 : University Park, USA)
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/96717; http://hdl.handle.net/10220/13206

The AlGaN/GaN-based high-electron-mobility transistors (HEMTs) are suitable for discrete components in many high power and high frequency power electronics applications useful for communications, satellites, power amplifiers, inverters/converters for electric and/or hybrid vehicles. Presently, these...