Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing

• المؤلفون الرئيسيون: Wang, X. C., Pey, Kin Leong, Lee, Pooi See, Ong, K. K., Wee, A. T. S., Chong, Y. F., Yeo, K. L.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97291; http://hdl.handle.net/10220/10532

Laser annealing (LA), in which the laser melts the surface layer of silicon and causes the dopants to be distributed uniformly within the melted region, produces abrupt, highly activated and ultrashallow junctions. The degree of melting is determined by the extent of laser absorption and rate of hea...