Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x as graded layer grown by solid-source molecular beam epitaxy

• Main Authors: Loke, Wan Khai, Tan, Kian Hua, Wicaksono, Satrio, Yoon, Soon Fatt, Owen, Man Hon Samuel, Yeo, Yee-Chia
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/97329; http://hdl.handle.net/10220/11494
• Institution: Nanyang Technological University

In this study, we investigate the effect of the molecular beam epitaxial growth temperature on the epilayer tilt and the strain relaxation in the InAlAs M-buffer layer when the In composition is varied linearly from 6 to 57% followed by an inverse grading to 52% where InAlAs is lattice-matched to In...