Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field
A 10-band k.p formula including electric field effect is introduced to calculate the band structures and optical gain of multilayer dilute nitride semiconductors. The band structure and optical gain of 70 Å In0.37Ga0.63As0.975N0.025 compressive strain quantum well with tensile strained 200 Å GaAs0...
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/97355 http://hdl.handle.net/10220/11842 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | A 10-band k.p formula including electric field effect is introduced to calculate the band structures and optical gain of multilayer dilute nitride semiconductors. The band structure and optical gain of 70 Å In0.37Ga0.63As0.975N0.025 compressive strain quantum well with tensile strained 200 Å GaAs0.997N0.003 barrier with emission wavelength at 1.3 um are investigated. Under an electric field of 100 keV/cm, the fundamental interband transition Stark shift is calculated, the red shift is about 140.5 meV. The peak gain is greatly decreased from 4396 cm-1 to 865 cm-1 for carrier concentration of 8×1018 cm-3. If considering dielectric effect, the effective electric field is 7.22 keV/cm, the Stark shift is greatly depressed to 1.6 meV and peak gain is slightly decreased to 4226 cm-1. |
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