Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field
A 10-band k.p formula including electric field effect is introduced to calculate the band structures and optical gain of multilayer dilute nitride semiconductors. The band structure and optical gain of 70 Å In0.37Ga0.63As0.975N0.025 compressive strain quantum well with tensile strained 200 Å GaAs0...
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sg-ntu-dr.10356-973552020-03-07T13:24:47Z Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field Fan, Weijun School of Electrical and Electronic Engineering International Conference on Electrical & Computer Engineering (7th : 2012 : Dhaka, Bangladesh) DRNTU::Engineering::Electrical and electronic engineering A 10-band k.p formula including electric field effect is introduced to calculate the band structures and optical gain of multilayer dilute nitride semiconductors. The band structure and optical gain of 70 Å In0.37Ga0.63As0.975N0.025 compressive strain quantum well with tensile strained 200 Å GaAs0.997N0.003 barrier with emission wavelength at 1.3 um are investigated. Under an electric field of 100 keV/cm, the fundamental interband transition Stark shift is calculated, the red shift is about 140.5 meV. The peak gain is greatly decreased from 4396 cm-1 to 865 cm-1 for carrier concentration of 8×1018 cm-3. If considering dielectric effect, the effective electric field is 7.22 keV/cm, the Stark shift is greatly depressed to 1.6 meV and peak gain is slightly decreased to 4226 cm-1. 2013-07-18T03:20:18Z 2019-12-06T19:41:47Z 2013-07-18T03:20:18Z 2019-12-06T19:41:47Z 2012 2012 Conference Paper Fan, W. (2012). Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field. 2012 7th International Conference on Electrical and Computer Engineering. https://hdl.handle.net/10356/97355 http://hdl.handle.net/10220/11842 10.1109/ICECE.2012.6471559 en © 2012 IEEE. |
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DRNTU::Engineering::Electrical and electronic engineering Fan, Weijun Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field |
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A 10-band k.p formula including electric field effect is introduced to calculate the band structures and optical gain of multilayer dilute nitride semiconductors. The band structure and optical gain of 70 Å In0.37Ga0.63As0.975N0.025 compressive strain quantum well with tensile strained 200 Å GaAs0.997N0.003 barrier with emission wavelength at 1.3 um are investigated. Under an electric field of 100 keV/cm, the fundamental interband transition Stark shift is calculated, the red shift is about 140.5 meV. The peak gain is greatly decreased from 4396 cm-1 to 865 cm-1 for carrier concentration of 8×1018 cm-3. If considering dielectric effect, the effective electric field is 7.22 keV/cm, the Stark shift is greatly depressed to 1.6 meV and peak gain is slightly decreased to 4226 cm-1. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Fan, Weijun |
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Conference or Workshop Item |
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Fan, Weijun |
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Fan, Weijun |
title |
Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field |
title_short |
Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field |
title_full |
Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field |
title_fullStr |
Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field |
title_full_unstemmed |
Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field |
title_sort |
band structures and optical gain of ingaasn/gaasn strained quantum wells under electric field |
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2013 |
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https://hdl.handle.net/10356/97355 http://hdl.handle.net/10220/11842 |
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