Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field
A 10-band k.p formula including electric field effect is introduced to calculate the band structures and optical gain of multilayer dilute nitride semiconductors. The band structure and optical gain of 70 Å In0.37Ga0.63As0.975N0.025 compressive strain quantum well with tensile strained 200 Å GaAs0...
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Main Author: | Fan, Weijun |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Conference or Workshop Item |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/97355 http://hdl.handle.net/10220/11842 |
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Institution: | Nanyang Technological University |
Language: | English |
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