Effect of Ti alloying in nickel silicide formation

Effect of Ti alloying in nickel silicide formation

In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant N...

Full description

Saved in:
Bibliographic Details
Main Authors: Setiawan, Y., Tan, C. W., Lee, Pooi See, Pey, Kin Leong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:https://hdl.handle.net/10356/97441
http://hdl.handle.net/10220/10500
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
Description
Summary:In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant NiSi phase with some NiSi2 grains facetted in (111) plane was observed. A different mechanism occurred for the sample with minimal oxygen contamination where Ni3Si2 was found to be stable up to 900 °C. Nevertheless, Ti addition has delayed the silicidation reaction to 600 °C.

Similar Items