Effect of Ti alloying in nickel silicide formation

In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant N...

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Main Authors: Setiawan, Y., Tan, C. W., Lee, Pooi See, Pey, Kin Leong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/97441
http://hdl.handle.net/10220/10500
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-974412020-06-01T10:01:53Z Effect of Ti alloying in nickel silicide formation Setiawan, Y. Tan, C. W. Lee, Pooi See Pey, Kin Leong School of Electrical and Electronic Engineering School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant NiSi phase with some NiSi2 grains facetted in (111) plane was observed. A different mechanism occurred for the sample with minimal oxygen contamination where Ni3Si2 was found to be stable up to 900 °C. Nevertheless, Ti addition has delayed the silicidation reaction to 600 °C. 2013-06-20T01:21:30Z 2019-12-06T19:42:48Z 2013-06-20T01:21:30Z 2019-12-06T19:42:48Z 2005 2005 Journal Article Setiawan, Y., Lee, P. S., Tan, C. W., & Pey, K. L. (2006). Effect of Ti alloying in nickel silicide formation. Thin Solid Films, 504(1-2), 153-156. 0040-6090 https://hdl.handle.net/10356/97441 http://hdl.handle.net/10220/10500 10.1016/j.tsf.2005.09.066 en Thin solid films © 2005 Elsevier B.V.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Setiawan, Y.
Tan, C. W.
Lee, Pooi See
Pey, Kin Leong
Effect of Ti alloying in nickel silicide formation
description In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant NiSi phase with some NiSi2 grains facetted in (111) plane was observed. A different mechanism occurred for the sample with minimal oxygen contamination where Ni3Si2 was found to be stable up to 900 °C. Nevertheless, Ti addition has delayed the silicidation reaction to 600 °C.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Setiawan, Y.
Tan, C. W.
Lee, Pooi See
Pey, Kin Leong
format Article
author Setiawan, Y.
Tan, C. W.
Lee, Pooi See
Pey, Kin Leong
author_sort Setiawan, Y.
title Effect of Ti alloying in nickel silicide formation
title_short Effect of Ti alloying in nickel silicide formation
title_full Effect of Ti alloying in nickel silicide formation
title_fullStr Effect of Ti alloying in nickel silicide formation
title_full_unstemmed Effect of Ti alloying in nickel silicide formation
title_sort effect of ti alloying in nickel silicide formation
publishDate 2013
url https://hdl.handle.net/10356/97441
http://hdl.handle.net/10220/10500
_version_ 1681057467168980992