Effect of Ti alloying in nickel silicide formation
In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant N...
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Main Authors: | Setiawan, Y., Tan, C. W., Lee, Pooi See, Pey, Kin Leong |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/97441 http://hdl.handle.net/10220/10500 |
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Institution: | Nanyang Technological University |
Language: | English |
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