Effect of Ti alloying in nickel silicide formation

• Main Authors: Setiawan, Y., Tan, C. W., Lee, Pooi See, Pey, Kin Leong
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• 在線閱讀: https://hdl.handle.net/10356/97441; http://hdl.handle.net/10220/10500
• 機構: Nanyang Technological University

In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant N...