Erbium silicidation on SiGe for advanced MOS application

• Main Authors: Yiew, Daphne Q. F., Setiawan, Y., Lee, Pooi See, Chi, Dong Zhi
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• Online Access: https://hdl.handle.net/10356/97473; http://hdl.handle.net/10220/10501
• Institution: Nanyang Technological University

Ti capping has been found to be beneficial on Er(Si1−yGey)2 formation in Ti/Er/Si1−xGex system. In the case of the system without Ti cap, the sample was oxidized at temperature as low as 300 °C and Er2SiO5 was found to be the predominant phase at all annealing temperatures. On the other hand, for Ti/Er/Si1−xGex samples, no Er2O3 was formed and the predominant phase found after annealing at higher temperature was Er(Si1−yGey)2 resulting in a lower sheet resistance than those without Ti cap. In addition, Ti capping has also improved the surface morphology of the sample by reducing the pyramid-like defects which were found in Er/Si1−xGex samples especially after annealing at 600 °C.