Synthesis of ultra-small Si/Ge semiconductor nano-particles using electrochemistry
In this paper, we describe the formation of colloidal Si/Ge semiconductor nano-particles by electrochemical etching of Ge quantum dots (GEDOT), Silicon–Germanium graded layers (GRADE) and Silicon–Germanium multi-quantum well (MQW) structures which are prepared on Silicon wafers using low pressure ch...
Saved in:
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/97660 http://hdl.handle.net/10220/11173 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | In this paper, we describe the formation of colloidal Si/Ge semiconductor nano-particles by electrochemical etching of Ge quantum dots (GEDOT), Silicon–Germanium graded layers (GRADE) and Silicon–Germanium multi-quantum well (MQW) structures which are prepared on Silicon wafers using low pressure chemical vapor deposition (LPCVD) technique. The formation of Si/Ge nano-particles is verified by transmission electron microscope (TEM) images and photoluminescence (PL) measurements. The Si/Ge nano-particles obtained from GEDOT and GRADE structures, gave blue emissions, upon 250 nm, and 300 nm UV excitations. However, the nano-particles obtained from the MQW structure did exhibit various color emissions (orange, blue, green and red) upon excitation with 250 nm, 360 nm, 380 nm and 400 nm wavelength light. |
|---|