Synthesis of ultra-small Si/Ge semiconductor nano-particles using electrochemistry

• Main Authors: Alkis, Sabri, Ghaffari, Mohammad, Okyay, Ali Kemal
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/97660; http://hdl.handle.net/10220/11173
• Institution: Nanyang Technological University

In this paper, we describe the formation of colloidal Si/Ge semiconductor nano-particles by electrochemical etching of Ge quantum dots (GEDOT), Silicon–Germanium graded layers (GRADE) and Silicon–Germanium multi-quantum well (MQW) structures which are prepared on Silicon wafers using low pressure chemical vapor deposition (LPCVD) technique. The formation of Si/Ge nano-particles is verified by transmission electron microscope (TEM) images and photoluminescence (PL) measurements. The Si/Ge nano-particles obtained from GEDOT and GRADE structures, gave blue emissions, upon 250 nm, and 300 nm UV excitations. However, the nano-particles obtained from the MQW structure did exhibit various color emissions (orange, blue, green and red) upon excitation with 250 nm, 360 nm, 380 nm and 400 nm wavelength light.