The substrate cooling effect of ion beam post treatment on ZAO films properties

• Main Authors: Wang, Wenna, Zhang, Dawei, Wang, Qi, Tao, Chuanxian, Ni, Zhengji, Zhuang, Songlin, Mei, Ting, Zhang, Dao Hua
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/97870; http://hdl.handle.net/10220/12197
• Institution: Nanyang Technological University

ZAO thin films with low surface roughness and low sheet resistance are required in the touch panels and display panels. In this work, we investigated the substrate cooling effect of ion beam post treatment on ZAO films properties, and one new way of obtain low surface roughness and low sheet resistance same time was proposed. The more exciting find of this paper is that, comparing to the samples without cooling during the process of ion beam post treatment, samples with proper cooling voltage show a sheet resistance decrease of 26% (from 11.9 Ω/□ to 8.8 Ω/□) and a roughness decrease of 35.5% (from 13.389 nm to 8.637 nm) without transparency losing. And the viewpoint that substrate cooling has the effect of weakening the crystallization, especially for the sub-face and internal parts of samples is deduced.