Electromigration reliability of interconnections in RF low noise amplifier circuit

• Main Authors: He, Feifei, Tan, Cher Ming
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/97926; http://hdl.handle.net/10220/11218
• Institution: Nanyang Technological University

With the continuous increase of the circuit complexity and the scaling down of the device size, electromigration (EM) failure in the interconnects has become the determining factor for circuit reliability. Most of the EM circuit simulators in the literature are at 2D level. The application of 2D sim...