Electromigration reliability of interconnections in RF low noise amplifier circuit

With the continuous increase of the circuit complexity and the scaling down of the device size, electromigration (EM) failure in the interconnects has become the determining factor for circuit reliability. Most of the EM circuit simulators in the literature are at 2D level. The application of 2D sim...

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Main Authors: He, Feifei, Tan, Cher Ming
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2013
主題:
在線閱讀:https://hdl.handle.net/10356/97926
http://hdl.handle.net/10220/11218
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機構: Nanyang Technological University
語言: English