The link between NBTI and TDDB of high-k gate P-MOSFETs

The link between NBTI and TDDB of high-k gate P-MOSFETs

The relationship between NBTI and TDDB of Hf-based high-k p-MOSFETs is examined. At certain NBTI stressing conditions, the conversion of switching hole traps into permanent trapped holes will occur to reduce the NBTI recovery. The conversion is shown to correspond to a degradation of the TDDB lifeti...

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Bibliographic Details
Main Authors: Gao, Yuan, Ang, Diing Shenp
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/98228
http://hdl.handle.net/10220/12359
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Institution: Nanyang Technological University
Language: English
Description
Summary:The relationship between NBTI and TDDB of Hf-based high-k p-MOSFETs is examined. At certain NBTI stressing conditions, the conversion of switching hole traps into permanent trapped holes will occur to reduce the NBTI recovery. The conversion is shown to correspond to a degradation of the TDDB lifetime. This evidence implies switching hole traps as a common link between NBTI and TDDB.

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