The link between NBTI and TDDB of high-k gate P-MOSFETs

The link between NBTI and TDDB of high-k gate P-MOSFETs

The relationship between NBTI and TDDB of Hf-based high-k p-MOSFETs is examined. At certain NBTI stressing conditions, the conversion of switching hole traps into permanent trapped holes will occur to reduce the NBTI recovery. The conversion is shown to correspond to a degradation of the TDDB lifeti...

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Main Authors: Gao, Yuan, Ang, Diing Shenp
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/98228
http://hdl.handle.net/10220/12359
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-982282020-03-07T13:24:48Z The link between NBTI and TDDB of high-k gate P-MOSFETs Gao, Yuan Ang, Diing Shenp School of Electrical and Electronic Engineering IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (19th : 2012 : Singapore) DRNTU::Engineering::Electrical and electronic engineering The relationship between NBTI and TDDB of Hf-based high-k p-MOSFETs is examined. At certain NBTI stressing conditions, the conversion of switching hole traps into permanent trapped holes will occur to reduce the NBTI recovery. The conversion is shown to correspond to a degradation of the TDDB lifetime. This evidence implies switching hole traps as a common link between NBTI and TDDB. 2013-07-26T03:28:37Z 2019-12-06T19:52:16Z 2013-07-26T03:28:37Z 2019-12-06T19:52:16Z 2012 2012 Conference Paper Gao, Y., & Ang, D. S. (2012). The link between NBTI and TDDB of high-k gate P-MOSFETs. 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). https://hdl.handle.net/10356/98228 http://hdl.handle.net/10220/12359 10.1109/IPFA.2012.6306262 en © 2012 IEEE.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Gao, Yuan
Ang, Diing Shenp
The link between NBTI and TDDB of high-k gate P-MOSFETs
description The relationship between NBTI and TDDB of Hf-based high-k p-MOSFETs is examined. At certain NBTI stressing conditions, the conversion of switching hole traps into permanent trapped holes will occur to reduce the NBTI recovery. The conversion is shown to correspond to a degradation of the TDDB lifetime. This evidence implies switching hole traps as a common link between NBTI and TDDB.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Gao, Yuan
Ang, Diing Shenp
format Conference or Workshop Item
author Gao, Yuan
Ang, Diing Shenp
author_sort Gao, Yuan
title The link between NBTI and TDDB of high-k gate P-MOSFETs
title_short The link between NBTI and TDDB of high-k gate P-MOSFETs
title_full The link between NBTI and TDDB of high-k gate P-MOSFETs
title_fullStr The link between NBTI and TDDB of high-k gate P-MOSFETs
title_full_unstemmed The link between NBTI and TDDB of high-k gate P-MOSFETs
title_sort link between nbti and tddb of high-k gate p-mosfets
publishDate 2013
url https://hdl.handle.net/10356/98228
http://hdl.handle.net/10220/12359
_version_ 1681035752047116288

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