The link between NBTI and TDDB of high-k gate P-MOSFETs

• Main Authors: Gao, Yuan, Ang, Diing Shenp
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Conference or Workshop Item
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/98228; http://hdl.handle.net/10220/12359

The relationship between NBTI and TDDB of Hf-based high-k p-MOSFETs is examined. At certain NBTI stressing conditions, the conversion of switching hole traps into permanent trapped holes will occur to reduce the NBTI recovery. The conversion is shown to correspond to a degradation of the TDDB lifeti...