Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule

• المؤلفون الرئيسيون: Li, Yongfeng, Yin, Wanjian, Deng, Rui, Chen, Rui, Chen, Jing, Yan, Qingyu, Yao, Bin, Sun, Handong, Wei, Su-Huai, Wu, Tom
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• منشور في: 2013
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/98257; http://hdl.handle.net/10220/17569
• المؤسسة: Nanyang Technological University

Although many oxide semiconductors possess wide bandgaps in the ultraviolet (UV) regime, currently the majority of them cannot efficiently emit UV light because the band-edge optical transition is forbidden in a perfect lattice as a result of the symmetry of the band-edge states. This quantum mechan...