In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V

• Main Authors: Teo, Khoon Leng, Ng, Geok Ing, Ranjan, Kumud, Shoron, O. F., Arulkumaran, Subramaniam, Rajan, S., Dolmanan, S. B., Manoj Kumar, Chandra Mohan, Tripathy, S.
• Other Authors: 2014 IEEE International Electron Devices Meeting (IEDM)
• Format: Conference or Workshop Item
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/98332; http://hdl.handle.net/10220/25663
• Institution: Nanyang Technological University

We report the first 3D Triple T-gate InAlN/GaN nano-channel (NC) Fin-HEMTs on Si substrate with record high device performances at VD as low as 0.5 V. Utilizing a T-gate approach on NC Fin-HEMT with stress engineered techniques, enhanced device transport properties with gm=646 mS/mm, Ion=1.03 A/mm, IOFF=1.13 μA/mm, ION/IOFF~106, SS=82 mV/dec at VD=0.5 V were achieved. In addition, the Fin-HEMT also exhibited 3.2 times lower DIBL of 28 mV/V. The dramatic improvement of device performance is due to the tensile stress induced by SiN passivation in the NC Fin-HEMT.