High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon

• Main Authors: Ranjan, Kumud, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2015
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• 在線閱讀: https://hdl.handle.net/10356/98334; http://hdl.handle.net/10220/25662

AlGaN/GaN high-electron-mobility transistors (HEMTs) with a 0.15-µm gate were fabricated on a Si substrate with an 8-nm-thick AlGaN barrier. The device exhibited a unity current gain cutoff frequency fT of 63 GHz and maximum oscillation frequency fmax of 124 GHz. Its three-terminal OFF-state breakdo...