High frequency drain current noise modeling in MOSFETs under sub-threshold condition

• المؤلفون الرئيسيون: Chan, Lye Hock, Yeo, Kiat Seng, Chew, Kok Wai Johnny, Ong, Shih Ni, Loo, Xi Sung, Boon, Chirn Chye, Do, Manh Anh
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/98370; http://hdl.handle.net/10220/6282; http://ieeexplore.ieee.org.ezlibproxy1.ntu.edu.sg/search/srchabstract.jsp?tp=&arnumber=5403709&queryText%3DHigh+Frequency+Drain+Current+Noise+Modeling+in+MOSFETs+under+Sub-Threshold+Condition%26openedRefinements%3D*%26searchField%3DSearch+All; http://www.isic2009.org/
• المؤسسة: Nanyang Technological University

A new high frequency drain current noise model was developed for MOSFETs under sub-threshold condition. A simple parameter extraction technique is proposed, which utilizes Y-parameter analysis on the RF small-signal equivalent circuit. Good agreement has been obtained between the predicted and measu...