Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switching

• المؤلفون الرئيسيون: Raghavan, Nagarajan, Pey, Kin Leong, Wu, Xing, Liu, Wenhu, Bosman, Michel
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/98448; http://hdl.handle.net/10220/11336

We present a statistical percolation model for retention lifetime assessment of resistive switching memory at the high-resistance state and correlate it to the soft breakdown phenomenon in ultrathin gate dielectrics. Electrical characterization in the low-resistance state shows that the location of...