A self-rectifying HfOx-based unipolar RRAM with NiSi electrode

• Main Authors: Tran, Xuan Anh, Gao, Bin, Yu, Hongyu, Zhu, W. G., Kang, J. F., Liu, W. J., Fang, Z., Wang, Z. R., Yeo, Y. C., Nguyen, B. Y., Li, M. F.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98464; http://hdl.handle.net/10220/11349
• Institution: Nanyang Technological University

In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (>; 103 at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (>; 102) and good retention characteristics (>;105 s at 125 °C ); and 4) wide readout margin for high-density cross-point memory devices (number of word lines 106 for the worst case condition).