Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding

• المؤلفون الرئيسيون: Tan, Cher Ming, Yu, Weibo, Wei, Jun
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/98498; http://hdl.handle.net/10220/17368
• المؤسسة: Nanyang Technological University

Two low-temperature wafer bonding methods, namely the medium-vacuum level wafer bonding (MVWB) and plasma-activated wafer bonding (PAWB), are performed. After low-temperature annealing(500°C) for a short time (<5h) , the bond strength of these two low-temperature methods is improved as compared...