Al2O3 interface engineering of germanium epitaxial layer grown directly on silicon

• المؤلفون الرئيسيون: Fitzgerald, Eugene A., Tan, Yew Heng, Yew, Kwang Sing, Lee, Kwang Hong, Chang, Yao-Jen, Chen, Kuan-Neng, Ang, Diing Shenp, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/98577; http://hdl.handle.net/10220/17265
• المؤسسة: Nanyang Technological University

The quality of germanium (Ge) epitaxial film grown directly on silicon (Si) substrate is investigated based on the electrical properties of a metal-oxide-semiconductor capacitor (MOSCAP). Different thermal cycling temperatures are used in this study to investigate the effect of temperature on the Ge...