Effect of direct current stressing to Cu–Cu bond interface imperfection for three dimensional integrated circuits

• Main Authors: Made, Riko I., Peng, Lan, Li, Hong Yu, Gan, Chee Lip, Tan, Chuan Seng
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Materials::Metallic materials::Alloys
• Online Access: https://hdl.handle.net/10356/98611; http://hdl.handle.net/10220/9997
• Institution: Nanyang Technological University

The ability to be used as both a glue layer and the interconnection line has put Cu metal interconnection as the ultimate goal for 3D-IC. However, the inherent properties of Cu–Cu bond interface that are not always perfect have raised some concerns. This work investigates the evolution of the Cu–Cu...