The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs

The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs

In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold swing and gate/buffer leakage has been extrac...

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Bibliographic Details
Main Authors: Yuan, Li, Wang, Weizhu, Lo, Guo-Qiang, Lee, Kean Boon, Sun, Haifeng, Selvaraj, Susai Lawrence, Zhou, Xing
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Online Access:https://hdl.handle.net/10356/98704
http://hdl.handle.net/10220/17438
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Institution: Nanyang Technological University
Language: English
Description
Summary:In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold swing and gate/buffer leakage has been extracted from the TCAD simulation. Based on that, the compact SPICE device model of HEMTs has been built up, which can be used for DC/transient SPICE simulation and power electronics circuit demonstration. The SPICE modeling results agree well with our TCAD simulation, indicating good revealing of the physical mechanisms of the AlGaN/GaN HEMTs' operation.

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