The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs

• Main Authors: Yuan, Li, Wang, Weizhu, Lo, Guo-Qiang, Lee, Kean Boon, Sun, Haifeng, Selvaraj, Susai Lawrence, Zhou, Xing
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: https://hdl.handle.net/10356/98704; http://hdl.handle.net/10220/17438
• Institution: Nanyang Technological University

In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold swing and gate/buffer leakage has been extracted from the TCAD simulation. Based on that, the compact SPICE device model of HEMTs has been built up, which can be used for DC/transient SPICE simulation and power electronics circuit demonstration. The SPICE modeling results agree well with our TCAD simulation, indicating good revealing of the physical mechanisms of the AlGaN/GaN HEMTs' operation.