The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs

• المؤلفون الرئيسيون: Yuan, Li, Wang, Weizhu, Lo, Guo-Qiang, Lee, Kean Boon, Sun, Haifeng, Selvaraj, Susai Lawrence, Zhou, Xing
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/98704; http://hdl.handle.net/10220/17438

In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold swing and gate/buffer leakage has been extrac...