The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs
In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold swing and gate/buffer leakage has been extrac...
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Main Authors: | , , , , , , |
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格式: | Conference or Workshop Item |
語言: | English |
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2013
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在線閱讀: | https://hdl.handle.net/10356/98704 http://hdl.handle.net/10220/17438 |
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