Fast simulation of hybrid CMOS and STT-MTJ circuits with identified internal state variables

• Main Authors: Shang, Yang, Fei, Wei, Yu, Hao
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98706; http://hdl.handle.net/10220/12534
• Institution: Nanyang Technological University

Hybrid integration of CMOS and non-volatile memory (NVM) devices has become the technology foundation for emerging non-volatile memory based computing. The primary challenge to validate a hybrid system with both CMOS and non-volatile devices is to develop a SPICE-like simulator that can simulate the dynamic behavior of hybrid system accurately and efficiently. Since spin-transfer-toque magnetic-tunneling-junction (STT-MTJ) device is one of the most promising candidates of next generation NVM devices, it is under great interest in including this new device in the standard CMOS design flow. The previous approaches require complex equivalent circuits to represent the STT-MTJ device, and ignore dynamic effect without consideration of internal states. This paper proposes a new modified nodal analysis for STT-MTJ device with identified internal state variables. As demonstrated by a number of experiment examples on hybrid systems with both CMOS and STT-MTJ devices, our newly developed SPICE-like simulator can deal with the dynamic behavior of STT-MTJ device under arbitrary driving condition and reduce the CPU time by more than 20 times for memory circuits when compared to the previous equivalent circuit approaches.