Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film

The switching behaviors of the resistive switching device based on Ni-rich nickel oxide thin film during the set and reset processes in the pulse voltage experiment have been examined. In the switching from a high-resistance state (HRS) to a low-resistance state (LRS) during the set process, the for...

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Main Authors: Hu, S. G., Liu, Yang, Chen, Tupei, Liu, Zhen, Yang, Ming, Yu, Qi, Fung, Stevenson Hon Yuen
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/98941
http://hdl.handle.net/10220/13453
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-989412020-03-07T14:00:29Z Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film Hu, S. G. Liu, Yang Chen, Tupei Liu, Zhen Yang, Ming Yu, Qi Fung, Stevenson Hon Yuen School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The switching behaviors of the resistive switching device based on Ni-rich nickel oxide thin film during the set and reset processes in the pulse voltage experiment have been examined. In the switching from a high-resistance state (HRS) to a low-resistance state (LRS) during the set process, the formation of filament is the dominant process. The switching is easier to occur with a shorter off time between pulses, indicating that heat diffusion plays an important role. On the other hand, in the switching from the LRS to the HRS during the reset process, there is a competition between the formation and deformation of filament, which is much stronger than that in the set process. The heat diffusion during the off time between pulses affects both the formation and deformation of filaments. Thus, there is no definite relationship in statistics between the off time and the occurrence of the reset switching. 2013-09-13T02:10:42Z 2019-12-06T20:01:20Z 2013-09-13T02:10:42Z 2019-12-06T20:01:20Z 2012 2012 Journal Article 0018-9383 https://hdl.handle.net/10356/98941 http://hdl.handle.net/10220/13453 10.1109/TED.2012.2186300 en IEEE transactions on electron devices © 2012 IEEE
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Hu, S. G.
Liu, Yang
Chen, Tupei
Liu, Zhen
Yang, Ming
Yu, Qi
Fung, Stevenson Hon Yuen
Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film
description The switching behaviors of the resistive switching device based on Ni-rich nickel oxide thin film during the set and reset processes in the pulse voltage experiment have been examined. In the switching from a high-resistance state (HRS) to a low-resistance state (LRS) during the set process, the formation of filament is the dominant process. The switching is easier to occur with a shorter off time between pulses, indicating that heat diffusion plays an important role. On the other hand, in the switching from the LRS to the HRS during the reset process, there is a competition between the formation and deformation of filament, which is much stronger than that in the set process. The heat diffusion during the off time between pulses affects both the formation and deformation of filaments. Thus, there is no definite relationship in statistics between the off time and the occurrence of the reset switching.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Hu, S. G.
Liu, Yang
Chen, Tupei
Liu, Zhen
Yang, Ming
Yu, Qi
Fung, Stevenson Hon Yuen
format Article
author Hu, S. G.
Liu, Yang
Chen, Tupei
Liu, Zhen
Yang, Ming
Yu, Qi
Fung, Stevenson Hon Yuen
author_sort Hu, S. G.
title Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film
title_short Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film
title_full Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film
title_fullStr Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film
title_full_unstemmed Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film
title_sort effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film
publishDate 2013
url https://hdl.handle.net/10356/98941
http://hdl.handle.net/10220/13453
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