Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film

• Main Authors: Hu, S. G., Liu, Yang, Chen, Tupei, Liu, Zhen, Yang, Ming, Yu, Qi, Fung, Stevenson Hon Yuen
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98941; http://hdl.handle.net/10220/13453
• Institution: Nanyang Technological University

The switching behaviors of the resistive switching device based on Ni-rich nickel oxide thin film during the set and reset processes in the pulse voltage experiment have been examined. In the switching from a high-resistance state (HRS) to a low-resistance state (LRS) during the set process, the for...