Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures

Resistive switching behavior of partially anodized aluminum thin film has been investigated at temperatures of 25 °C–250 °C. Both the reset and set voltages decrease with increasing temperature, showing Arrhenius-like dependence with small activation energies. The pulse voltage experiment also sugge...

Full description

Saved in:
Bibliographic Details
Main Authors: Zhu, Wei, Chen, Tupei, Yang, Ming, Liu, Yang, Fung, Stevenson Hon Yuen
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/98989
http://hdl.handle.net/10220/13478
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-98989
record_format dspace
spelling sg-ntu-dr.10356-989892020-03-07T14:00:29Z Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures Zhu, Wei Chen, Tupei Yang, Ming Liu, Yang Fung, Stevenson Hon Yuen School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Resistive switching behavior of partially anodized aluminum thin film has been investigated at temperatures of 25 °C–250 °C. Both the reset and set voltages decrease with increasing temperature, showing Arrhenius-like dependence with small activation energies. The pulse voltage experiment also suggests that the conductive filament breaking/reconnection is easier to occur at a higher temperature. Some possible mechanisms for the phenomena are discussed. On the other hand, at elevated temperatures without continuous electric field applied, while the high-resistance state exhibits no significant change with time, the low-resistance state (LRS) shows a continuous degradation, and there is a sudden failure. The LRS failure time shows Arrhenius dependence with an activation energy of ~1.3 eV, suggesting that the LRS failure could be due to the migration of the excess Al atoms at high temperatures. 2013-09-16T06:30:21Z 2019-12-06T20:02:04Z 2013-09-16T06:30:21Z 2019-12-06T20:02:04Z 2012 2012 Journal Article Zhu, W., Chen, T., Yang, M., Liu, Y., & Fung, S. H. Y. (2012). Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures. IEEE transactions on electron devices, 59(9), 2363-2367. 0018-9383 https://hdl.handle.net/10356/98989 http://hdl.handle.net/10220/13478 10.1109/TED.2012.2205692 en IEEE transactions on electron devices © 2012 IEEE
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Zhu, Wei
Chen, Tupei
Yang, Ming
Liu, Yang
Fung, Stevenson Hon Yuen
Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures
description Resistive switching behavior of partially anodized aluminum thin film has been investigated at temperatures of 25 °C–250 °C. Both the reset and set voltages decrease with increasing temperature, showing Arrhenius-like dependence with small activation energies. The pulse voltage experiment also suggests that the conductive filament breaking/reconnection is easier to occur at a higher temperature. Some possible mechanisms for the phenomena are discussed. On the other hand, at elevated temperatures without continuous electric field applied, while the high-resistance state exhibits no significant change with time, the low-resistance state (LRS) shows a continuous degradation, and there is a sudden failure. The LRS failure time shows Arrhenius dependence with an activation energy of ~1.3 eV, suggesting that the LRS failure could be due to the migration of the excess Al atoms at high temperatures.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhu, Wei
Chen, Tupei
Yang, Ming
Liu, Yang
Fung, Stevenson Hon Yuen
format Article
author Zhu, Wei
Chen, Tupei
Yang, Ming
Liu, Yang
Fung, Stevenson Hon Yuen
author_sort Zhu, Wei
title Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures
title_short Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures
title_full Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures
title_fullStr Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures
title_full_unstemmed Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures
title_sort resistive switching behavior of partially anodized aluminum thin film at elevated temperatures
publishDate 2013
url https://hdl.handle.net/10356/98989
http://hdl.handle.net/10220/13478
_version_ 1681040229702565888