Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures

Resistive switching behavior of partially anodized aluminum thin film has been investigated at temperatures of 25 °C–250 °C. Both the reset and set voltages decrease with increasing temperature, showing Arrhenius-like dependence with small activation energies. The pulse voltage experiment also sugge...

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Bibliographic Details
Main Authors: Zhu, Wei, Chen, Tupei, Yang, Ming, Liu, Yang, Fung, Stevenson Hon Yuen
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/98989
http://hdl.handle.net/10220/13478
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Institution: Nanyang Technological University
Language: English