Resistive switching behavior of partially anodized aluminum thin film at elevated temperatures

• المؤلفون الرئيسيون: Zhu, Wei, Chen, Tupei, Yang, Ming, Liu, Yang, Fung, Stevenson Hon Yuen
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/98989; http://hdl.handle.net/10220/13478

Resistive switching behavior of partially anodized aluminum thin film has been investigated at temperatures of 25 °C–250 °C. Both the reset and set voltages decrease with increasing temperature, showing Arrhenius-like dependence with small activation energies. The pulse voltage experiment also sugge...