Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy

• Main Authors: Bosman, Michel, Ong, Beng Sheng, Chiam, Sing Yang, Pey, Kin Leong, Qin, Hailang, Liu, Zhiqiang, Troadec, Cedric, Goh, Johnson Kuan Eng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/99331; http://hdl.handle.net/10220/17845
• Institution: Nanyang Technological University

Ballisticelectron emission spectroscopy (BEES) was used to determine the electron barrier height at the interface of Au and an oxidizedGaAs film. Two thresholds were observed in the spectra. In a two-step procedure, we identified the first threshold at ∼1.4 eV, which we show arose from electron-hole...