Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy

Ballisticelectron emission spectroscopy (BEES) was used to determine the electron barrier height at the interface of Au and an oxidizedGaAs film. Two thresholds were observed in the spectra. In a two-step procedure, we identified the first threshold at ∼1.4 eV, which we show arose from electron-hole...

全面介紹

Saved in:
書目詳細資料
Main Authors: Bosman, Michel, Ong, Beng Sheng, Chiam, Sing Yang, Pey, Kin Leong, Qin, Hailang, Liu, Zhiqiang, Troadec, Cedric, Goh, Johnson Kuan Eng
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2013
在線閱讀:https://hdl.handle.net/10356/99331
http://hdl.handle.net/10220/17845
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!
機構: Nanyang Technological University
語言: English

相似書籍