White-light-induced disruption of nanoscale conducting filament in hafnia

• Main Authors: Zhang, H. Z., Bersuker, G., Zhou, Y., Yew, Kwang Sing, Ang, Diing Shenp, Kawashima, Tomohito, Bera, Milan Kumar
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2015
• Online Access: https://hdl.handle.net/10356/99990; http://hdl.handle.net/10220/38678
• Institution: Nanyang Technological University

Nanoscale conducting filament, which forms the basis of the HfO2 resistive memory, is shown to exhibit a “negative photoconductivity” behavior, in that, electrical conduction through it can be disrupted upon white-light illumination. This behavior should be contrasted against the positive photocondu...