White-light-induced disruption of nanoscale conducting filament in hafnia
Nanoscale conducting filament, which forms the basis of the HfO2 resistive memory, is shown to exhibit a “negative photoconductivity” behavior, in that, electrical conduction through it can be disrupted upon white-light illumination. This behavior should be contrasted against the positive photocondu...
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Main Authors: | Zhang, H. Z., Bersuker, G., Zhou, Y., Yew, Kwang Sing, Ang, Diing Shenp, Kawashima, Tomohito, Bera, Milan Kumar |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2015
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Online Access: | https://hdl.handle.net/10356/99990 http://hdl.handle.net/10220/38678 |
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Institution: | Nanyang Technological University |
Language: | English |
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