White-light-induced disruption of nanoscale conducting filament in hafnia

Nanoscale conducting filament, which forms the basis of the HfO2 resistive memory, is shown to exhibit a “negative photoconductivity” behavior, in that, electrical conduction through it can be disrupted upon white-light illumination. This behavior should be contrasted against the positive photocondu...

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Main Authors: Zhang, H. Z., Bersuker, G., Zhou, Y., Yew, Kwang Sing, Ang, Diing Shenp, Kawashima, Tomohito, Bera, Milan Kumar
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2015
在線閱讀:https://hdl.handle.net/10356/99990
http://hdl.handle.net/10220/38678
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